2005. 5. 16 1/2 semiconductor technical data TIP36CA triple diffused pnp transistor revision no : 0 high power amplifier application. features recommended for 75w audio frequency amplifier output stage. complementary to tip35ca. icmax:-25a. maximum rating (ta=25 ) 1. base 2. collector (heat sink) 3. emitter to-3p(n)-e c g l k r a d b h f i d pp t j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 0.60+0.15-0.05 15.60 0.20 + _ 4.80 0.20 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 3.20 0.10 + _ 18.70 0.20 + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -10 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -10 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -100 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-1.5a 55 - 160 h fe (2) v ce =-4v, i c =-15a 15 - - collector-emitter saturation voltage v ce(sat) (1) i c =-15a, i b =-1.5a - - -1.8 v v ce(sat) (2) i c =-25a, i b =-5.0a - - -4.0 base-emitter voltage v be v ce =-5v, i c =-5a - - -1.5 v transition frequency f t v ce =-5v, i c =-1a 3.0 - - mhz characteristic symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current i c -25 a base current i b -5.0 a collector power dissipation (tc=25 ) p c 125 w junction temperature t j 150 storage temperature range t stg -55 150 note : h fe (1) classification r:55~110, o:80~160
2005. 5. 16 2/2 TIP36CA revision no : 0 0.1 10 1 0.3 3 0.5 5 30 10 50 100 300 500 1k 0.01 0.03 0.05 0.1 0.3 0.5 1 2 0.3 10 130 35 0.5 0.3 1 0.5 3 10 530 t =25 c j 0.2 1 3 10 30 0.5 5 i /i =10 c v =30v cc b t stg f t t r t d(on) collector current i (a) c time t ( s) reverse bias safe operating area c collector current i (a) collector-emitter voltage v (v) ce t 100 c j dc current gain h fe collector current i (a) c h - i fe c v =4.0v ce p - tc case temperature tc ( c) 100 150 0 25 50 75 power dissipation p (w) d 0255075 125 100 125 forward bias safe operating area ce collector-emitter voltage v (v) 1 3 100 c collector current i (a) 10 30 single nonrepetitive pluse ta=25 c curves must be derated linearly with increase in temperature * i max.(pulsed)* 300 s* dc oper a tio n c tc=25 c 1.0ms* 10ms* 200 (continuous) i max c d 150 collector current i (a) c time t ( s) 0 020 20 5 10 15 25 30 60 40 80 100 120 0.1 0.3 0.5 1 3 5 10 30 50 100 < = 550 i /i =10 v =30v cc t =25 c j cb b1 i =i b2 t =25 c j switching characteristics switching characteristics
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